SBE818 no. a1379-1/4 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. applications ? high frequency recti cation (switching regulators, converters, choppers). features ? composite type device with 2 low i r sbd shoused in one package, facilitating high density mounting. ? small switching noise. ? low forward voltage (i f =2.0a, v f max=0.62v). ? low reverse current (v r =15v, i r max=7.5 a). ? ultrasmall package permitting applied sets to be small and slim (mounting height 0.75mm). speci cations absolute maximum ratings at ta=25c (value per element) parameter symbol conditions ratings unit repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 30 v average output current i o when mounted on ceramic substrate, rectangular wave 180c 2.0 a when mounted on glass epoxy substrate 1.5 a surge forward current i fsm 50hz sine wave, 1 cycle 20 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : sc *: the absolute maximum ratings and electrical characteristics refer to those between terminal 1 and terminal 7 (or 8), and between terminal 3 and terminal 5 (or 6). ordering number : ena1379 d0308sb ms im tc-00001737 sanyo semiconductors data sheet SBE818 www.semiconductor-sanyo.com/network low i r schottky barrier diode 30v, 2.0a recti er
SBE818 no. a1379-2/4 electrical characteristics at ta=25c (value per element) parameter symbol conditions ratings unit min typ max reverse voltage v r i r =1ma 30 v forward voltage v f 1i f =1.0a 0.48 0.53 v v f 2i f =1.5a 0.53 0.58 v v f 3i f =2.0a 0.57 0.62 v reverse current i r v r =15v 7.5 a interterminal capacitance c v r =10v, f=1mhz 30 pf reverse recovery time t rr i f =i r =100ma, see speci ed test circuit. 10 ns thermal resistance rth(j-a)1 when mounted in cu-foiled area of 0.96mm 2 0.03mm on glass epoxy substrate 100 c / w rth(j-a)2 when mounted on ceramic substrate (900mm 2 0.8mm) 65 c / w package dimensions electrical connection unit : mm (typ) 7045-004 t rr test circuit *: terminal 4 is used for the purposes such as test. although it is connected to anode 2, please handle it as nc terminal 1 : anode1 2 : nc 3 : anode2 4 : anode2(nc) 5 : cathode2 6 : cathode2 7 : cathode1 8 : cathode1 sanyo : emh8 1 4 85 0.125 0. 2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 234 1 765 8 1 : anode1 2 : nc 3 : anode2 4 : anode2(nc) 5 : cathode2 6 : cathode2 7 : cathode1 8 : cathode1 top view duty 10% 50 100 10 --5v t rr 10 s 100ma 100ma 10ma
SBE818 no. a1379-3/4 0 it14256 it14257 1e-03 2 3 5 7 2 3 5 1e-02 7 2 3 5 1e-01 0.6 0.3 0.2 0.4 0.1 0.5 0 30 15 10 20 525 1e-03 1e-04 1e-02 1e-01 1e+00 1e+01 1e+02 1e+04 1e+03 ta=125 c 75 c 25 c 0 c --25 c ta=125 c 100 c 75 c 50 c 25 c 0 c -- 2 5 c 50 c 100 c 7 2 3 1e+00 (2) (3) (5) (1) 0 0 0.5 1.8 1.6 1.4 1.2 0.2 0.4 0.6 0.8 1.0 2.5 2.0 1.0 1.5 it14258 (4) 0 0.0e+00 1.0e--05 1.5e--05 2.0e--05 2.5e--05 3.0e--05 3.5e--05 4.0e--05 4.5e--05 5.0e--05 10 5 5.0e--06 20 15 25 30 35 it14259 (1) (2) (3) (4) 0 0.4 1.2 0.8 1.6 2.0 0.2 1.0 0.6 1.4 1.8 0 25 50 125 100 75 150 it14260 (5) (1) (2) (4) 0 0.5 1.5 1.0 2.0 2.5 0 25 50 125 100 75 150 it14261 (3) (5) (1) (2) (4) (3) forward voltage, v f -- v forward current, i f -- a i f -- v f reverse voltage, v r -- v i r -- v r reverse current, i r -- a 0.01 23 7 0.1 0 52 2 37 1.0 5 24 20 16 12 8 4 3 it13214 0.1 1.0 10 100 10 2 3 5 2 3 5 7 23 57 23 3 55 72 it13217 average output current, i o -- a p f (av) -- i o average forward power dissipation, p f (av) -- w 180 360 sine wave 360 rectangular wave (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 (5)dc ta -- i o 360 180 360 rectangular wave sine wave ambient temperature, ta -- c average output current, i o -- a p r (av) -- v r average reverse voltage, v r -- v (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 rectangular wave sine wave 180 360 v r average reverse power dissipation, p r (av) -- w i fsm -- t time, t -- s surge forward current, i fsm (peak) -- a i s 20ms t current waveform 50hz sine wave c -- v r reverse voltage, v r -- v interterminal capacitance, c -- pf f=1mhz (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 (5)dc ta -- i o 360 180 360 rectangular wave sine wave ambient temperature, ta -- c average output current, i o -- a (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 (5)dc 360 v r
SBE818 no. a1379-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of december, 2008. speci cations and information herein are subject to change without notice.
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